Numéro
J. Phys. IV France
Volume 04, Numéro C2, Février 1994
European Workshop on Piezoelectric Materials : Crystal Growth, Properties and Prospects
Page(s) C2-107 - C2-112
DOI http://dx.doi.org/10.1051/jp4:1994213
European Workshop on Piezoelectric Materials : Crystal Growth, Properties and Prospects

J. Phys. IV France 04 (1994) C2-107-C2-112

DOI: 10.1051/jp4:1994213

Growth of piezoelectric thin films by sputtering

D. REMIENS, B. JABER and P.Y. JOUAN

Université de Valenciennes, CRITT Maubeuge, Laboratoire des Matériaux Industriels, BP. 311, 59304 Valenciennes cedex, France


Abstract
Lead titanate thin films have been deposited on different substrates by radio frequency magnetron sputtering from pressed powders targets. The films have been deposited without substrate heating. The amorphous films were then annealed in order to obtain the perovskite structure. Two types of post-annealing were study : conventional annealing and rapid thermal annealing (R.T.A.). The main advantage of the RTA process is to avoid (or to limit) the problem of interdiffusion or of interfacial disturbance between the substrate (in particular Silicium substrate) and the lead titanate thin film. The composition, structure and microstructure of PT films were evaluated as a function of the annealing parameters for conventional and rapid annealing.



© EDP Sciences 1994