Numéro
J. Phys. IV France
Volume 04, Numéro C2, Février 1994
European Workshop on Piezoelectric Materials : Crystal Growth, Properties and Prospects
Page(s) C2-33 - C2-45
DOI http://dx.doi.org/10.1051/jp4:1994205
European Workshop on Piezoelectric Materials : Crystal Growth, Properties and Prospects

J. Phys. IV France 04 (1994) C2-33-C2-45

DOI: 10.1051/jp4:1994205

Growth of piezoelectric crystals by Czochralski method

D. COCHET-MUCHY

Crismatec, Usine de Gières, 2 rue des Essarts, 38610 Gières, France


Abstract
The Czochralski method is one of the most widely used industrial technique to grow single-crystals, since it applies to a very large range of compounds, such as semiconductors, oxides, fluorides, etc... Many exhibit piezoelectric properties and some of them find applications in Surface-Acoustic-Waves or Bulk-Acoustic-Waves devices. That explains the large amount of work made on the development of the corresponding growth processes and the high levels of production achieved in the world today. We will review the basic principle, main features and parameters of the Czochralski method, and the configuration which is used by Crismatec. Then we will discuss in more details the growth parameters for the two piezoelectric crystals that we are producing, LiNbO3 and LiTaO3, and present the state-of-the-art for both crystals : pulling axis, diameter and quality. We will also discuss some preliminary results on the growth of the new La3Ga5SiO14 langasite crystal.



© EDP Sciences 1994