Numéro
J. Phys. IV France
Volume 03, Numéro C8, Décembre 1993
IX International Conference on Small Angle Scattering
Page(s) C8-349 - C8-352
DOI http://dx.doi.org/10.1051/jp4:1993871
IX International Conference on Small Angle Scattering

J. Phys. IV France 03 (1993) C8-349-C8-352

DOI: 10.1051/jp4:1993871

Small-angle X-ray scattering study of the microstructure of highly porous silicon

A. NAUDON1, Ph. GOUDEAU1, A. HALIMAOUI2 and G. BOMCHIL2

1  Laboratoire de Métallurgie Physique, URA 131 du CNRS, Université de Poitiers, 40 avenue du Recteur Pineau, 86022 Poitiers cedex, France
2  France Télécom, CNET, BP. 98, 38243 Meylan cedex, France


Abstract
Small-Angle X-ray Scattering is well suited to the study of porous silicon microstructure since the pore radii range (2-10 nm) corresponds to the small-angle scattering range (1-100 nm). In all the studies realized till now, the porous silicon layers were always supported by the substrate. Recently, it has been possible to detach the porous silicon layer from the substrate. We performed small-angle X-ray scattering measurements, on such P-type samples, at a synchrotron radiation source. Close to the origin, the scattering pattern shows an anisotropic behaviour when titling the sample surface with respect to the X-ray beam. This anisotropy is different from the one observed previously in the case of P+ samples.



© EDP Sciences 1993