Numéro
J. Phys. IV France
Volume 03, Numéro C7, Novembre 1993
The 3rd European Conference on Advanced Materials and Processes
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
Page(s) C7-441 - C7-444
DOI http://dx.doi.org/10.1051/jp4:1993768
The 3rd European Conference on Advanced Materials and Processes
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés

J. Phys. IV France 03 (1993) C7-441-C7-444

DOI: 10.1051/jp4:1993768

Characterizing faulted dipoles in TiAl with electron microscopy and computed image simulations

B. VIGUIER, K.J. HEMKER, R. SCHÄUBLIN and J.L. MARTIN

Institut de Génie Atomique, Ecole Polytechnique Fédérale, 1015 Lausanne, Switzerland


Abstract
The low temperature deformation microstructure of TiAl is dominated by the presence of stacking fault dipoles [1]. Two different faulted dipole geometries have been proposed in the literature [2,3], and the existence of both types of faulted dipoles have been verified in the present study with comparisons to computer simulated images. These comparisons suggest that extrinsic stacking faults in TiAl are bounded by single Shockley partial dislocations when the deformation occurs at room temperature and by double Shockley partial dislocations when the deformation occurs at 80 K. This change in the faulted dipole geometry is believed to be related to a change in the activity of the super dislocations that control deformation.



© EDP Sciences 1993