Numéro
J. Phys. IV France
Volume 03, Numéro C7, Novembre 1993
The 3rd European Conference on Advanced Materials and Processes
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
Page(s) C7-2137 - C7-2142
DOI http://dx.doi.org/10.1051/jp4:19937339
The 3rd European Conference on Advanced Materials and Processes
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés

J. Phys. IV France 03 (1993) C7-2137-C7-2142

DOI: 10.1051/jp4:19937339

Local texture measurements with the scanning electron microscope

G. GOTTSTEIN and O. ENGLER

Institut für Metallkunde und Metallphysik, RWTH Aachen, Kopernikusstr. 14, 5100 Aachen, Germany


Abstract
Techniques for convenient measurement of the crystallographic orientation of small volumes in bulk samples by electron diffraction in the SEM are discussed. They make use of Selected Area Electron Channelling Patterns (SAECP) and Electron Back Scattering Patterns (EBSP). The principle of pattern formation as well as measuring and evaluation procedure are introduced. The methods offer a viable procedure for obtaining information on the spatial arrangement of orientations, i.e. on orientation topography. Thus, they provide a new level of information on crystallographic texture. An application of the techniques for local texture measurements is demonstrated by an example, namely for investigation of considering the recrystallization behaviour of binary Al-1.3%Mn with large precipitates. Finally, further developments of the EBSP technique are addressed.



© EDP Sciences 1993