Numéro
J. Phys. IV France
Volume 03, Numéro C7, Novembre 1993
The 3rd European Conference on Advanced Materials and Processes
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
Page(s) C7-1417 - C7-1420
DOI http://dx.doi.org/10.1051/jp4:19937218
The 3rd European Conference on Advanced Materials and Processes
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés

J. Phys. IV France 03 (1993) C7-1417-C7-1420

DOI: 10.1051/jp4:19937218

Intergranular film analyses in α-SiC sintered with Al-additives

M.-L. DUVAL-RIVIERE and J. VICENS

LERMAT, URA 1317 du CNRS, ISMRA, 6 bd du Maréchal Juin, 14050 Caen cedex, France


Abstract
HREM and EDS microanalyses were performed on two grades of hotpressed [MATH]-SiC (0.3 wt% and 1.5 wt% Al additives) in the as-sintered state and also after annealing treatments and creep tests in the temperature range 1600-1950°C. An amorphous aluminosilicate film (- 1 nm thick) was imaged in grain boundaries of all samples except for the one deformed by three point bending at 1600°C which exhibits only a small amount of Al and 0 intergranular segregation.



© EDP Sciences 1993