Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
J. Phys. IV France 03 (1993) C7-1417-C7-1420
Intergranular film analyses in α-SiC sintered with Al-additivesM.-L. DUVAL-RIVIERE and J. VICENS
LERMAT, URA 1317 du CNRS, ISMRA, 6 bd du Maréchal Juin, 14050 Caen cedex, France
HREM and EDS microanalyses were performed on two grades of hotpressed [MATH]-SiC (0.3 wt% and 1.5 wt% Al additives) in the as-sintered state and also after annealing treatments and creep tests in the temperature range 1600-1950°C. An amorphous aluminosilicate film (- 1 nm thick) was imaged in grain boundaries of all samples except for the one deformed by three point bending at 1600°C which exhibits only a small amount of Al and 0 intergranular segregation.
© EDP Sciences 1993