Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
J. Phys. IV France 03 (1993) C7-971-C7-979
Plasma nitriding of Al 99.5H.-Y. CHEN, H.-R. STOCK and P. MAYR
Stiftung Institut für Werkstofftechnik, Badgasteiner Str. 3, 2800 Bremen 33, Germany
Aluminium nitride (AlN) is a very interesting ceramic because of its combination of properties such as high thermal stability, high hardness and an unusual combination of high thermal and low electrical conductivity. But it is very difficulty to obtain an AlN layer on the aluminium substrates by thermochemical nitriding process. Since a thin film of aluminium oxide existing on the surface of every aluminium substrate prevents the nitrogen atoms from diffusing into the aluminium lattice. However, it is possible to sputter the oxide film away from the aluminium surface in a glow discharge with the use of plasma nitriding technik and to allow the formation of AlN layer on the aluminium bulk. In the present work specimen of aluminium Al 99.5 has been plasma nitrided in a modified plasma nitriding unit, in which a diffusion pump was used to obtain an especially low partial pressure of oxygen in the vauum chamber. The sputter-cleaning prior to the nitriding was conducted with the variation of the applied voltage and the sputtering time. The plasma nitriding after sputtering was carried out in a glow discharge of pure nitrogen. The metallurgical properties of the AlN-Al-composites were characterized in detail. The results show that shiny black AlN layers with thickness up to a few micrometers have been created on the surface of aluminium and so the enhancement of wear and corrosion resistances of the substrate can be obtained.
© EDP Sciences 1993