Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-445 - C5-448
DOI http://dx.doi.org/10.1051/jp4:1993596
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-445-C5-448

DOI: 10.1051/jp4:1993596

Observation of type-I and type-II Wannier-stark-effect in InGaAs/InGaAs superlattices

R. SCHWEDLER, F. BRÜGGEMANN, B. OPITZ, A. KOHL, K. WOLTER, K. LEO and H. KURZ

Institut für Halbleitertechnik, RWTH Aachen, Sommerfeldstrasse 24, 52074 Aachen, Germany


Abstract
The formation of minibands is demonstrated in photocurrent experiments on shallow In0.53Ga0.47As/In0.40Ga0.60As superlattices grown by low pressure metal-organic vapor phase epitaxy. Field-dependent variations of the spectral shape are attributed to Wannier-Stark-localization. Both type-I transitions between electrons and heavy holes and type-II transitions involving light holes confined in the In0.40Ga0.60As layers are observed and identified by comparison with theoretical calculations of the superlattice electronic transitions.



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