Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-351 - C5-354
DOI http://dx.doi.org/10.1051/jp4:1993573
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-351-C5-354

DOI: 10.1051/jp4:1993573

Spin relaxation of excitons in strained InGaAs/GaAs quantum wells

B. DAREYS1, T. AMAND1, X. MARIE1, B. BAYLAC1, J. BARRAU,1, M. BROUSSEAU1, I. RAZDOBREEV1 and D.J. DUNSTAN2

1  Laboratoire de Physique des Solides, URA 74 du CNRS, INSA, Département de Physique, avenue de Rangueil, 31077 Toulouse cedex, France
2  Department of Physics, University of Surrey, Guildford, Surrey GU2 5XH, England


Abstract
We have investigated the exciton spin dynamics in strained InxGa1-x As/GaAs (x ≤ 0.2) quantum wells. The variation of the initial polarization with the excitation energy is well correlated with the increasing mixing of the valence band states. The time behavior of the depolarization curves clearly demonstrates the prime importance of the hole and exciton spin relaxation processes.



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