Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-347 - C5-350
DOI http://dx.doi.org/10.1051/jp4:1993572
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-347-C5-350

DOI: 10.1051/jp4:1993572

Optical properties of excitons in GaAs quantum wires

R. RINALDI1, R. CINGOLANI2, M. FERRARA1, U. MARTI3, D. MARTIN3, F.K. REINHART3, H. LAGE4, D. HEITMANN4 and K. PLOOG4

1  Unità GNEQP Dipartimento di Fisica, Università di Bari, 70100 Bari, Italy
2  Dipartimento Scienza dei Materiali, Università di Lecce, via Arnesano, 73100 Lecce, Italy
3  Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
4  Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80, Germany


Abstract
We report the result of a detailed spectroscopic investigation of the optical properties of excitons in rectangular (etched) and V-shaped (grown on non-planar substrates) GaAs quantum wires. High index excitonic transitions and strong polarization anisotropy of the optical spectra have been observed. The experimentally observed trasitions are in agreement with the theoretical evaluation of quantized energy levels based on the respective model potential.



© EDP Sciences 1993