Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-339 - C5-342
DOI http://dx.doi.org/10.1051/jp4:1993570
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-339-C5-342

DOI: 10.1051/jp4:1993570

Quantum wires obtained by dislocation slipping

F. VOILLOT1, R. CARLES1, M. GOIRAN1, C. GUASCH1, J.P. PEYRADE1 and E. BEDEL2

1  Laboratoire de Physique des Solides, LA074, INSAT, 31077 Toulouse cedex, France
2  LAAS du CNRS, 7 av. du Colonel Roche, 31077 Toulouse cedex, France


Abstract
Dislocation slipping is used as an atomic scale tool to cut a 5 nm GaAs single quantum well (QW) grown by MBE on a (001) GaAs substrate into quantum wires (QWW). Three point deformation bending is used to control dislocation slipping. The minimum value of the QWW widths is evaluated to 25 nm. PL studies after deformation show intense peak, shifted in regard to the undeformed SQW in good agreement with theory. Raman scattering results confirm the additional lateral confinement.



© EDP Sciences 1993