Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-335 - C5-338
DOI http://dx.doi.org/10.1051/jp4:1993569
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-335-C5-338

DOI: 10.1051/jp4:1993569

Carrier confinement and fabrication effects in GaInAs-InP quantum wires and dots

R.W. MAC LEOD1, C.M. SOTOMAYOR TORRES1, Y.S. TANG1 and A. KOHL2

1  Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, England
2  Institut für Halbleiter Technik der RWTH, Walter-Schottky-Haus, Sommerfeldstrasse, 5100 Aachen, Germany


Abstract
We report a fabrication and luminescence study of GaInAs-InP single quantum wells down to lateral dimensions of 15nm. The changes in the energy position of the spectrum of wires and dots is explored as a function of processing parameters. Blue energy shifts of up to 8meV observed are too small considering the lateral dimensions and therefore processing induced strain has to be invoked to understand the weaker confinement in these structures. Tests of wet etching and annealing are reported.



© EDP Sciences 1993