Le Journal de Physique IV 03 (1993) C5-331-C5-334
Excited-state excitons in strained quantum wells under pressureD. LEONG, A.D. PRINS, A.T. MENEY, D.J. DUNSTAN and K.P. HOMEWOOD
Strained-Layer Structures Research Group, University of Surrey, Guildford, Surrey GU2 5XH, England
We report measurements of the transition energies of the ground and excited state excitons in 100Å quantum wells of In0.15Ga0.85As and In0.18Ga0.82As as a function of hydrostatic pressure by photoconductivity excitation spectroscopy and absorption spectroscopy in a diamond anvil cell. The pressure coefficients of the E1HH1 and E2HH2 transitions agrees well with eight-band k.p theory provided the pressure coefficient of bulk strained InGaAs is given the anomalously low value reported previously [Wilkinson et al., Phys. Rev. B46, 3113 (1989)]. This result shows that the anomaly is an intrinsic property of the bulk strained crystal and is not associated with defects.
© EDP Sciences 1993