Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-331 - C5-334
DOI http://dx.doi.org/10.1051/jp4:1993568
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-331-C5-334

DOI: 10.1051/jp4:1993568

Excited-state excitons in strained quantum wells under pressure

D. LEONG, A.D. PRINS, A.T. MENEY, D.J. DUNSTAN and K.P. HOMEWOOD

Strained-Layer Structures Research Group, University of Surrey, Guildford, Surrey GU2 5XH, England


Abstract
We report measurements of the transition energies of the ground and excited state excitons in 100Å quantum wells of In0.15Ga0.85As and In0.18Ga0.82As as a function of hydrostatic pressure by photoconductivity excitation spectroscopy and absorption spectroscopy in a diamond anvil cell. The pressure coefficients of the E1HH1 and E2HH2 transitions agrees well with eight-band k.p theory provided the pressure coefficient of bulk strained InGaAs is given the anomalously low value reported previously [Wilkinson et al., Phys. Rev. B46, 3113 (1989)]. This result shows that the anomaly is an intrinsic property of the bulk strained crystal and is not associated with defects.



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