Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-327 - C5-330
DOI http://dx.doi.org/10.1051/jp4:1993567
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-327-C5-330

DOI: 10.1051/jp4:1993567

Band offsets in strained InGaAsP/InGaAsP quantum well optical modulator structures

R.W. MARTIN1, S.L. WONG1, R.J. NICHOLAS1, A. SMITH2, M.A. GIBBON2, E.J. THRUSH2 and J.P. STAGG2

1  Department of Physics, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.
2  BNR Europe Ltd., London Road, Harlow, Essex CM17 9NA, U.K.


Abstract
Magneto-absorption experiments on a range on In1-xGaxAsyP1-y/InGaAsP multi-quantum well (MQW) structures, including both tensile and compressive strained wells, are presented. Estimates for the band offsets are made in a lattice matched and a strain-balanced structure, and a model to predict the band offsets as a function of strain in InGaAsP heterostructures is described.



© EDP Sciences 1993