Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-323 - C5-326
DOI http://dx.doi.org/10.1051/jp4:1993566
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-323-C5-326

DOI: 10.1051/jp4:1993566

Oscillator strength of the E1HH1 excitonic transition as a function of magnetic field in modulation doped GaAlAs/GaAs quantum well

P. VICENTE1, A.V. KAVOKIN1, A. RAYMOND1, S.G. LYAPIN2, K. ZEKENTES3, D. DUR1 and W. KNAP1

1  Groupe d'Etudes des Semiconducteurs, CNRS, Université Montpellier II, place E. Bataillon, 34095 Montpellier cedex 5, France
2  Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.
3  FORTH Institute of Electronic Structures and Lasers, P.O. Box 1527, Heralion 71110 Crete, Greece


Abstract
We present an experimental and theoretical investigation of the oscillator strength of E1HH1 excitonic transition in the presence of the external magnetic field in thick GaAlAs/GaAs quantum well. We observe a dramatic increase of the oscillator strength given by a factor 6 when the magnetic field increases from 0 to 8 Tesla. The variational calculation performed in models of exciton confinement as a whole particle, and independent electron and hole quantization demonstrates the substantial magnetic field induced squeezing of the exciton wave function in a QW plane, which causes an increase of the oscillaltor strength in good agreement with experimental data.



© EDP Sciences 1993