Le Journal de Physique IV 03 (1993) C5-303-C5-306
Selective exciton formation in thin GaAs-AlGaAs quantum wellsP.W.M. BLOM1, P.J. VAN HALL2, C. SMIT2, J.P. CUYPERS2 and J.H. WOLTER2
1 Philips Research Laboratories, Eindhoven, The Netherlands
2 Physics Dpt., Eindhoven University of Technology, P.O. Box, 5600 MB Eindhoven, The Netherlands
We have found experimentally, that the exciton luminescence rise times in GaAs/AlGaAs quantum wells oscillate as a function of incident laser energies. Guided by Monte-Carlo simulations we interpret these results as the occurrence of selective LO-phonon assisted exciton formation.
© EDP Sciences 1993