Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-303 - C5-306
DOI http://dx.doi.org/10.1051/jp4:1993561
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-303-C5-306

DOI: 10.1051/jp4:1993561

Selective exciton formation in thin GaAs-AlGaAs quantum wells

P.W.M. BLOM1, P.J. VAN HALL2, C. SMIT2, J.P. CUYPERS2 and J.H. WOLTER2

1  Philips Research Laboratories, Eindhoven, The Netherlands
2  Physics Dpt., Eindhoven University of Technology, P.O. Box, 5600 MB Eindhoven, The Netherlands


Abstract
We have found experimentally, that the exciton luminescence rise times in GaAs/AlGaAs quantum wells oscillate as a function of incident laser energies. Guided by Monte-Carlo simulations we interpret these results as the occurrence of selective LO-phonon assisted exciton formation.



© EDP Sciences 1993