Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-299 - C5-302
DOI http://dx.doi.org/10.1051/jp4:1993560
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-299-C5-302

DOI: 10.1051/jp4:1993560

A photoluminescence study of δ-doped GaAs

M. EL ALLALI,, C.B. SORENSEN and E. VEJE

H.C. Oersted Laboratory, Universitetsparken 5, 2100 Copenhagen, Denmark


Abstract
Samples of GaAs δ-doped with beryllium have been studied with photoluminescence. With a lightly doped sample, (2 x 1016 Be atoms per m2) a spectral feature is observed which can be interpreted as caused by radiative recombinations between spatially non-confined conductionband electrons and acceptor-related holes forming a miniband system confined spatially to the , δ-doped region. With higher densities of Be, this weak feature disappears. Instead, strong recombination to bulk Be acceptors shows up, indicating that the bulk-density of Be atoms which during growth have diffused away from the δ-layer is so high that such acceptors drain the photoexcited electrons. A narrow, excitonic line situated 0.6 meV above the n =1 free exciton line, lower polariton branch, is seen, but the well-known defect-induced bound excitons in the 1504-1512 meV region are not observed. The results are discussed.



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