Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-291 - C5-294
DOI http://dx.doi.org/10.1051/jp4:1993558
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-291-C5-294

DOI: 10.1051/jp4:1993558

Effect of thermal diffusion on the excitonic reflectivity spectra of InGaAs/GaAs quantum wells

W.P. GILLIN1, H. PEYRE2, J. CAMASSEL2, K.P. HOMEWOOD1, I.V. BRADLEY1 and R. GREY3

1  Department of Electronic and Electrical Engineering University of Surrey, Guildford, Surrey GU2 5XH, U.K.
2  Groupe d'Etudes des Semiconducteurs, CNRS, CC074, Université Montpellier II, 34095 Montpellier cedex 5, France
3  Department of Electronic and Electrical Engineering University of Sheffield, Mappin Street, Sheffield S13JD, U.K.


Abstract
We have investigated the effect of intermixing on the excitonic reflectivity spectra of a 100 Å thick InGaAs/GaAs quantum well (QW). We could resolve both the El - Hl and E2 - H2 excitonic features, up to LD = 80 Å. We show that both energy shifts agree well with a simple mode1 which assumes a Fick's law diffision, with a diffusion coefficient that is independent of the concentration of the cationic species. Next, considering the change (improvement) in signal to : noise ratio versus thermal annealing, we suggest that, in our samples, we not only get a broadening of the quantum well as the diffision proceeds but, also, a diffision of the lattice constituents in the plane of the well. This in-plane diffision smoothes the interfaces and reduces the monolayer well width fluctuations.



© EDP Sciences 1993