Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-273 - C5-276
DOI http://dx.doi.org/10.1051/jp4:1993554
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-273-C5-276

DOI: 10.1051/jp4:1993554

Optically induced excitonic distribution in GaInAs-AlGaInAs semiconductor superlattices under an electric field

G. WANG1, P. TRONC1, J. DEPEYROT1, J.C. HARMAND2 and J.F. PALMIER2

1  Laboratoire d'Optique Physique, Ecole Supérieure de Physique et Chimie Industrielles, 10 rue Vauquelin, 75231 Paris cedex 05, France
2  Centre National d'Etudes des Télécommunications, 196 av. H. Ravera, 92220 Bagneux, France


Abstract
We report photoluminescence studies on some GaInAs/AlGaInAs superlattices lattice matched to InP. An electric field was applied along the growth axis. The spectra recorded at temperatures between 10 K and 300 K, present only one peak, the energy of which does not vary with the strength of the electric field. Moreover, the intensity of the peak does not monotonely vary with the temperature. These results are interpreted in a model which involves centers of nonradiative recombination, a density of states with a gaussian distribution of eigenenergies for the trapped excitons and a two dimensional density of states which takes into account fluctuations of composition and of well and barrier width for the free excitons.



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