Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-269 - C5-272
DOI http://dx.doi.org/10.1051/jp4:1993553
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-269-C5-272

DOI: 10.1051/jp4:1993553

Indirect excitons in strained GaxIn1-xAs/InP quantum wells

P. MICHLER, A. HANGLEITER, A. MORITZ, G. FUCHS, V. HÄRLE and F. SCHOLZ

4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany


Abstract
We present direct experimental evidence that in GaxIn1-xAs/InP quantum wells the bandstructure undergoes a direct-to-indirect gap transition in k-space above a critical value of x. We observe a drastical increase of the measured radiative exciton lifetimes for samples where x>xc, with xc, depending on well width. Using a six-band k.p calculation of the valence subbands we show that for x>xc the valence band maximum is at k ≠ 0, i.e. the bandstructure becomes indirect.



© EDP Sciences 1993