Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-265 - C5-268
DOI http://dx.doi.org/10.1051/jp4:1993552
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-265-C5-268

DOI: 10.1051/jp4:1993552

Excitonic transitions in GaInAs/GaAs surface quantum wells

J. DREYBRODT, A. FORCHEL and J.P. REITHMAIER

Technische Physik, University of Würzburg Am Hubland, 97074 Würzburg, Germany


Abstract
We have studied the influence of the surface on the optical properties of GaInAs/GaAs quantum wells for various top barrier thicknesses. A blue shift of the emission lines up to about 25 meV combined with a line broadening is observed for a 5 nm thick surface quantum well (20% In) without any GaAs coverage. The line broadening as well as the energy shift depend strongly on the quantum well thickness. This can be modeled by assuming a 5 eV vacuum potential at the surface.



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