Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-261 - C5-264
DOI http://dx.doi.org/10.1051/jp4:1993551
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-261-C5-264

DOI: 10.1051/jp4:1993551

Interface excitons in type-two quantum structures

R. ZIMMERMANN1 and D. BIMBERG2

1  Max-Planck-Arbeitsgruppe "Halbleitertheorie", Hausvogteipl. 5-7, 10117 Berlin, Germany
2  Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany


Abstract
A calculation of exciton binding energies and oscillator strengths in type- II quantum structures is presented which takes into account Coulomb correlation in the growth direction, finite barrier heights, and image charge effects. Numerical results are given for excitons in InAlAs/InP superlattices and in AlAs/GaAs quantum wells. Compared with the direct exciton in type-I quantum wells, binding energies and oscillator strengths are reduced in type-II structures, but less than naively expected.



© EDP Sciences 1993