Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-249 - C5-252
DOI http://dx.doi.org/10.1051/jp4:1993548
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-249-C5-252

DOI: 10.1051/jp4:1993548

Optical properties of single and double (111)-grown (Ga, In)As-GaAs strained-layer quantum wells under strong photo-injection

P. BORING1, K.J. MOORE2, P. BIGENWALD1, B. GIL1 and K. WOODBRIDGE3

1  Groupe d'Etudes des Semiconducteurs, Université de Montpellier II, case courrier 074, 34095 Montpellier cedex 5, France
2  The Manchester Metropolitan University, Department of Mathematics and Physics, John Dalton Building, Chester Street, Manchester M1 5GD, U.K.
3  University College London, Department of Electronic and Electrical Engineering, London WC1E 7JE, U.K.


Abstract
We show that manybody-effects and bandgap renormalization can be easily produced in strained-layer quantum wells with internal built-in piezo-electric fields, under photo excitation. Our observation was made at low temperature by comparing the behaviour of Ga0.92ln0.08As-GaAs strained layer single and double quantum wells grown along the (001) and (111) directions when the densities of photo-injected carriers is tuned over several decades. Comparison between experimental data and the results of a Hartree calculation including the space charge effects reveals that manybody interactions are efficiently photo-induced in the (111)-grown samples. Moreover, in the case of double quantum wells, additional transitions appear in the photoluminescence spectra, due to the tunnelling of the two first excited heavy-hole levels for moderate densities.



© EDP Sciences 1993