Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-245 - C5-248
DOI http://dx.doi.org/10.1051/jp4:1993547
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-245-C5-248

DOI: 10.1051/jp4:1993547

Type II GaAs/AlAs superlattices under high excitation

K. BOUJDARIA, D. SCALBERT and C. BENOIT À LA GUILLAUME

Groupe de Physique des Solides, CNRS, Université Denis Diderot, 2 place Jussieu, 75251 Paris cedex 05, France


Abstract
High intensity photoluminescence data on GaAs/AlAs superlattices and multi quantum wells of type II at low temperature are reported. The variation with density of the renormalized band gap reveals the competition between the Hartree energy and the many-body effects (mainly exchange). Preliminary analysis for a lot of samples with widely different periods provides a satisfactory fit with Hartree-Fock model. The kinetics of luminescence and total decay in the electron-hole plasma regime is measured. In some samples, a phase transition was observed which is tentatively interpreted in term of electron-hole liquid condensation.



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