Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-229 - C5-232
DOI http://dx.doi.org/10.1051/jp4:1993543
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-229-C5-232

DOI: 10.1051/jp4:1993543

Electric field induced [MATH]-X transition in GaAs-AlAs coupled quantum well structures

M. HAGN, A. ZRENNER, G. BÖHM and G. WEIMANN

Walter Schottky Institut, Technische Universität München, Am Coulombwall, 85748 Garching, Germany


Abstract
Phonon replicas are investigated at the electric field induced Γ-X transition in GaAs/AlAs coupled quantum well structures by photoluminescence spectroscopy. In the real- and k-space indirect regime the observed replicas are assigned to AlAs LO, TO and LA zone-edge phonons. At the indirect-direct transition those phonons disappear and a new replica emerges, which is assigned as a GaAs-LO phonon at the Γ-point. The observed phonon replicas are shown to be a local probe for the distribution of the ground state electronic wave function in the GaAs/AlAs coupled quantum well structure.



© EDP Sciences 1993