Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-147 - C5-150
DOI http://dx.doi.org/10.1051/jp4:1993526
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-147-C5-150

DOI: 10.1051/jp4:1993526

Optical characterization of CdTe/ZnTe semiconductor wires and dots

C. GOURGON1, B. ERIKSSON1, L.S. DANG1, H. MARIETTE1 and C. VIEU2

1  CEA-CNRS joint group "Microstructures de Semiconducteurs II-VI", Laboratoire de Spectrométrie Physique, Université Joseph Fourier, BP. 87, 38402 Grenoble, France
2  Laboratoire de Microélectronique et de Microstructures, CNRS, 196 av. H. Ravera, 92225 Bagneux, France


Abstract
Arrays of wires and dots have been fabricated by electron beam lithography and Ar+ ion beam etching from CdTe/ZnTe quantum wells. Low temperature photoluminescence coming out from these structures is still observed for the smallest wires (40 nm) whereas for the dots, the detection limit occurs for lateral dimensions of 100 nm.



© EDP Sciences 1993