Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-123 - C5-130
DOI http://dx.doi.org/10.1051/jp4:1993522
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-123-C5-130

DOI: 10.1051/jp4:1993522

Optical properties of quantum wells with a field-effect-induced lateral superlattice

C. PETERS1, W. HANSEN1, J.P. KOTTHAUS1 and M. HOLLAND2

1  Sektion Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, 80539 München, Germany
2  DEEE, University of Glasgow, 128QQ U.K.


Abstract
A new developed stacked gate technique and a special MBE-grown quantum well structure is used to investigate the optical properties of a quantum well in a field effect induced lateral superlattice potential. Gate voltages applied at two different gates allow to tune both the superlattice potential amplitude as well as the energetical position with respect to the Fermi-energy. The luminescence and luminescence excitation spectra show a strong dependence on these voltages. At certain gate voltage configurations electrons are filled into the minima of the lateral potential and form an array of quasi one-dimensional electron channels. At this point the luminescence splits into distinct peaks reflecting the lateral separation of photo excited electrons and holes. Excitation measurements illustrate the existence of occupied electron channels and unoccupied barriers between them.



© EDP Sciences 1993