Le Journal de Physique IV 03 (1993) C5-83-C5-90
Exciton-related lasing mechanism in ZnSe-(Zn, Cd) Se multiple quantum wellsY. KAWAKAMI1, I. HAUKSSON2, H. STEWART2, J. SIMPSON2, I. GALBRAITH2, K.A. PRIOR2 and B.C. CAVENETT2
1 Department of Electrical Engineering Kyoto University, Kyoto 606, Japan
2 Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, U.K.
The processes involved in the stimulated emission by photo pumping in (Zn,Cd)Se-ZnSe multiple quantum wells (MQWs) have been investigated at 77K for a series of different well widths. It has been shown by means of photoluminescence excitation spectroscopy that the confined excitons in the well play an important role in determining the lasing mechanism. The optical gain just above the lasing threshold is attributed to the recombination of an exciton accompanied by emission of one LO phonon. Far above threshold inelastic exciton-exciton scattering processes contribute significantly to the gain.
© EDP Sciences 1993