Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-27 - C5-30
DOI http://dx.doi.org/10.1051/jp4:1993505
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-27-C5-30

DOI: 10.1051/jp4:1993505

Picosecond photoluminescence of resonantly-excited excitons in GaAs quantum wells

A. VINATTIERI1, J. SHAH2, T.C. DAMEN2, D.S. KIM2, L.N. PFEIFFER3 and L.J. SHAM4

1  Dipartimento di Fisica dell'Universita', Largo E. Fermi 2, 50125 Firenze, Italy
2  AT[MATH]T Bell Laboratories, Holmdel, NJ 07733, U.S.A.
3  AT[MATH]T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
4  University of California at San Diego, La Jolla, CA 92093, U.S.A.


Abstract
We show that the initial dynamics of resonantly-excited excitons in quantum wells is controlled by several processes such as radiative recombination, spin relaxation of excitons, electrons and holes, and scattering between different in-plane momentum states of excitons. We present a unifïed analysis of the results, which provides quantitative information about these important rates, and a good physical understanding of the initial dynamics of nonequilibrium excitons. In particular, we show that the enhanced radiative recombination rate of excitons makes an important contribution to the early decay of the photoluminescence.



© EDP Sciences 1993