Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-19 - C5-25
DOI http://dx.doi.org/10.1051/jp4:1993504
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-19-C5-25

DOI: 10.1051/jp4:1993504

Lifetime of excitons in GaAs quantum wells

B. SERMAGE1, S. LONG1, B. DEVEAUD2 and D.S. KATZER3

1  France Telecom, CNET, PAB, 196 avenue Henri Ravera, 92220 Bagneux, France
2  France Telecom, CNET, LAB, 22300 Lannion, France
3  Naval Research Laboratory, Washington, DC 20375, U.S.A.


Abstract
Time resolved luminescence measurements under resonant excitation were performed at 10 K on the free exciton in very high quality GaAs-AlAs quantum wells. At resonance, the luminescence intensity is increased by two orders of magnitude, and the decay is short. The radiative lifetime of the excitons in the radiant states is about 18 ps in agreement with the theory of Hanamura and Andréani.



© EDP Sciences 1993