Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-15 - C5-18
DOI http://dx.doi.org/10.1051/jp4:1993503
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-15-C5-18

DOI: 10.1051/jp4:1993503

Heavy-hole intersubband transition of resonantly excited excitons in quantum wells

R.A. HÖPFEL and R. RODRIGUES

Institut für Experimentalphysik, Universität Innsbruck, 6020 Innsbruck, Austria


Abstract
The exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum, is studied by time-resolved luminescence spectroscopy. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband is determined as 130 ± 20 ps, in agreement with theoretical estimations of intersubband scattering based on acoustic phonon emission. The exciton lifetime in the second heavy-hole subband is considerably longer than reported values of the recombination time in the lowest exciton state at k=0. These findings lead to novel intersubband laser concepts based on excitons.



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