Numéro
J. Phys. IV France
Volume 03, Numéro C4, Septembre 1993
4th International Workshop on Positron and Positronium Chemistry
Page(s) C4-193 - C4-195
DOI http://dx.doi.org/10.1051/jp4:1993426
4th International Workshop on Positron and Positronium Chemistry

J. Phys. IV France 03 (1993) C4-193-C4-195

DOI: 10.1051/jp4:1993426

Characterization of porous silicon by positron annihilation

Y. ITOH1, H. MURAKAMI2 and A. KINOSHITA3

1  The Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, Saitama 351-01, Japan
2  Department of Physics, Faculty of Education, Tokyo Gakugei University, Koganei-shi, Tokyo 184, Japan
3  Faculty of Science and Engineering, Tokyo Denki University, Hatoyama, Saitama 350-03, Japan


Abstract
Characterization of porous silicon was performed by means of positron annihilation. Three components of the positron lifetime were observed, one of which was extremely long. The Doppler-broadened spectrum was sharp compared with that of crystal silicon, and became even narrower in an applied magnetic field. These results show that the porous structure is the cause of positronium formation in porous silicon.



© EDP Sciences 1993