J. Phys. IV France 03 (1993) C3-597-C3-597
Diamond synthesis at high filament temperatureD.M. LI1, T. MÄNTILÄ1 and J. LEVOSKA2
1 Institute of Materials Science, Tampere University of Technology, P.O. Box 589, 33101 Tampere, Finland
2 Microelectronics and Material Physics Laboratories, University of Oulu, P.O. Box 400, 90571 Oulu, Finland
Diamond particles and films have been deposited on silicon wafer by using hot filament assisted chemical vapour deposition (HFCVD). Tantalum carbide filaments were used in the temperature range of 2700-2890°C. The filament can be repeatedly used for diamond deposition in CH4/H2/O2 atmosphere without deformation in its geometry. Diamond structure was deposited at high methane concentration up to 12% at filament temperature of 2890°C. By introducing 5.6% of oxygen, the methane concentration can be extended to 16%. Diamond particles and films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy.
© EDP Sciences 1993