Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-535 - C3-540
DOI http://dx.doi.org/10.1051/jp4:1993374
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-535-C3-540

DOI: 10.1051/jp4:1993374

Chemical vapor deposition of hafnium carbide and hafnium nitride

G. EMIG1, G. SCHOCH2 and O. WORMER2

1  Institut für Techniche Chemie 1, Universität Erlangen-Nümberg, Egerlandstrasse 3, 8520 Erlangen, Germany
2  Institut für Chemische Technik der Universität Karlsruhe Kaiserstr. 12, 7500 Karlsruhe 1, Germany


Abstract
The paper describes alternative high- temperature coatings for carbon fiber reinforced carbon (CFC) and carbon fiber reinforced silicon carbide (C/SiC) comparing CVD of hahium carbide and hafnium nitride. Hafnium carbide and hahium nitride layers were obtained in a thermally- stimulated CVD reactor by reaction of hafnium tetrachloride, methan and addition of hydrogen. Thermodymnic modeling of the reactions HfCl4 + H2 + CH4 → HfCl4-x, C, HCl ; HfCl4 + H2 + N2 → HfN, HfCl4-x, HCl. shows the possibility of depositing a nearly carbon- free hafnium carbide layer, but HfM should be deposited at lower ternperatures without any solid byproduct. These theoretical calculations could be proved experimentally in a thermally activated CVD process.



© EDP Sciences 1993