Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-519 - C3-526
DOI http://dx.doi.org/10.1051/jp4:1993372
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-519-C3-526

DOI: 10.1051/jp4:1993372

A study of AlN-Si3N4 codeposits using the L.P.C.V.D. technique

F. HENRY, B. ARMAS, M. BALAT, R. BERJOAN and C. COMBESCURE

Institut de Science et de Génie des Matériaux et Procédés, CNRS-IMP BP. 5, Odeillo, 66125 Font Romeu cedex, France


Abstract
We have studied the codeposition of aluminum nitride and silicon nitride, using aluminum trichloride and silicon tetrachloride as vectors of aluminum and silicon respectively, ammonia as source of nitrogen, and nitrogen as carrier gas. A preliminary thermodynamic study allowed us to determine the influence of pressure, temperature and gas composition on the Al, Si, N, Hl Cl system. Particularly, we have shown that the Al/Si ratio as well as the quantity of ammonia play a crucial role in the composition of the codeposit. An experimental study has been carried out using a hot-wall reactor. At 1253 K with a pressure of 133 Pa, we have obtained deposits varying from AlN to Si3N4, via intermediate compositions, by varying the reactive gas mixture. The codeposits have been characterized using various methods such as X-ray diffraction, Auger, X.P.S., S.E.M. and E.P.M.A..



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