Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-493 - C3-497
DOI http://dx.doi.org/10.1051/jp4:1993368
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-493-C3-497

DOI: 10.1051/jp4:1993368

Properties of µPCVD poly-silicon films after rapid thermal annealing

G. BESHKOV1, D.B. DIMITROV1, K. GESHEVA2 and V. BAKARDJIEVA3

1  Institute of Solid State Physics, Bulg. Acad. of Sciences, Bul. Tzar. Chaussee 72, 1784 Sofia, Bulgaria
2  Institute of Solar Energy and New Energy Sources, Bulg. Acad. of Sciences, Bul. Tzar. Chaussee 72, 1784 Sofia, Bulgaria
3  Institute of Microelectronics, Bul. Tzar. Chaussee 72, 1784 Sofia, Bulgaria


Abstract
Polly-Silicon Films obtained by µPCVD were studied with respect to their structural and electrical properties influenced by rapid thermal annealing (RTA) in vacuum. In addition an annealing in H2 atmosphere at atmospheric pressure was curried out. The structure and the morphology of the films were studied by Reflection High Energy Electron Diffraction (RHEED) technique and Scanning Electron Microscopy (SEM), respectively. An effect of increase of the crystallinity of the poly-Si films was observed as a result of RTA annealing. These observations coincide well with the measured sheet resistance of the layers. It was found that sheet resistance of the as-deposited films is about [MATH] and it decreases to a value of about [MATH] in dependence on the annealing.



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