Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-441 - C3-448
DOI http://dx.doi.org/10.1051/jp4:1993361
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-441-C3-448

DOI: 10.1051/jp4:1993361

Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications

G. ZHANG, H. ASONEN and M. PESSA

Department of Physics, Tampere University of Technology, P.O. Box 692, 33101 Tampere, Finland


Abstract
Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y layers lattice-matched to GaAs is reported. X-ray diffraction, photoluminescence, and Hall measurements show that the layers are of good quality. High-performance Al-free (In)GaAs(P)/ GaxIn1-xAsyP1-y quantum well lasers, emitting at 0.8 ≤ λ ≤ 1.1 µm, and GaAs/GaxIn1-xAsyP1-y heterojunction diodes are also demonstrated. The results are comparable to those obtained for the best AlGaAs based materials and devices. In particular, we report on the first tensile-strained GaAsP/GaInAsP/GaInP quantum well laser.



© EDP Sciences 1993