Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-361 - C3-366
DOI http://dx.doi.org/10.1051/jp4:1993349
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-361-C3-366

DOI: 10.1051/jp4:1993349

Effect of CVD process parameters on phase and chemical composition of BSCCO thin films

V.N. FUFLYIGIN, A.R. KAUL and S.A. POZIGUN

Chemistry Department, Moscow State University, 119899, Moscow V-234, Russia


Abstract
Superconducting BSCCO thin films were obtained with high deposition rate (about 35 nm/min) at temperatures of 720-810°C by MOCVD-technique. Characteristics of evaporation process of precursors were determined. The influence of deposition temperature and oxygen partial pressure on superconducting phase formation and chemical composition of the films was studied.



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