Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-345 - C3-352
DOI http://dx.doi.org/10.1051/jp4:1993347
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-345-C3-352

DOI: 10.1051/jp4:1993347

Growth kinetics of copper thin films in different MOCVD systems

T. GERFIN, M. BECHT and K.-H. DAHMEN

Laboratorium für Anorganische Chemie, ETH Zürich, Universitätsstrasse 6, 8092 Zürich, Switzerland


Abstract
Thin copper films were grown in two different MOCVD systems using bis- (2,2,6,6-tetramethyl-3,5-heptadionato)-copper, [Cu(thd)2], as precursor. The experiments were carried out in a horizontal hot-wall quartz reactor and a vertical coldwall apparatus of stainless steel. The thicknesses of the films were measured by profilometry, the absorption coefficients k at a wavelength of 1300nm by ellipsometry and the electrical sheet resistances by four-probe measurements. The growth kinetics, which depends on the partial pressure of the precursor, on the reaction gas type and on the substrate temperature, will be discussed. A mechanism will be given for the MOCVD process in the horizontal system.



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