Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-329 - C3-336
DOI http://dx.doi.org/10.1051/jp4:1993345
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-329-C3-336

DOI: 10.1051/jp4:1993345

LPCVD of SiC layers in a hot-wall reactor using TMS precursor

F. HENRY1, P. MARTI2, Y. CASAUX1, C. COMBESCURE1, A. FIGUERAS3, V. MADIGOU3, R. RODRIGUEZ-CLEMENTE3, A. MAZEL2, J. SEVELY2 and B. ARMAS1

1  Institut de Science et de Génie des Matériaux et Procédés, CNRS, BP. 5, Odeillo, 66125 Font Romeu cedex, France
2  Centre d'Elaboration des Matériaux et d'Etudes Structurales, Laboratoire d'Optique Electronique, CNRS, BP. 4347, 31055 Toulouse ceda, France
3  Institut de Ciencia de Materials de Barcelona, CSIC, Campus de la UAB, 08193 Cerdanyola, Spain


Abstract
Sic polycrystalline layers were grown by LPCVD in a hot wall reactor using tetramethylsilane (TMS) diluted in hydrogen as precursor. The morphology and the structure of the films were analyzed in terms of deposition temperature, total pressure in the reactor and TMS flow rate. The layers have been characterized using various techniques : SEM, X-ray diffraction and TEM (HREM and EELS).



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