J. Phys. IV France 03 (1993) C3-289-C3-296
Deposition of titanium nitride thin films at low temperatures by CVD using metalorganic and organometallic titanium compounds as precursorsC.I.M.A. SPEE1, J.L. LINDEN1, E.A. VAN DER ZOUWEN-ASSINK1, K. TIMMER1, F. VERBEEK1, H.A. MEINEMA1, D.M. FRIGO2 and S. VAN DER VEN2
1 TNO Plastics and Rubber Research Institute, TNO Industrial Research, P.O. Box 108, 3700 AC Zeist, The Netherlands
2 Billiton Research B.V., P.O. Box 40, 6800 AA Arnhem, The Netherlands
A series of titanium compounds, Ti(NMe2)4, t-BuTi(NMe2)3, [Ti(µ-N-t-Bu)(-NMe2)2]2, Ti(t-BuDAD)2 and CpTiC7H7, have been screened in combination with NH3 for their suitability as precursors for the CVD of titanium nitride films at substrate temperatures of 300-600°C and a system pressure of 1.5 Torr. The best TiN layers have been grown using t-BuTi(NMe2)3 and NH3, from which an 0.8 µm thick layer deposited at 400°C. showed a resistivity of 1.4*10-3 Ω*cm and contained 5 atom% carbon and 6 atom% oxygen.
© EDP Sciences 1993