Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-261 - C3-264
DOI http://dx.doi.org/10.1051/jp4:1993335
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-261-C3-264

DOI: 10.1051/jp4:1993335

Studies of laser induced-MOCVD zinc oxide films

Z. TAN, P. REN and W. LUO

Center for Functional Materials Research, Qingdao Institute of Chemical Technology, Qingdao 266042, China


Abstract
Thin films of ZnO have been prepared by the double photobeams ultraviolet laser induced- metallorganic chemical vapour deposition (MOCVD) technique. The structure and transparent photoconductive property of these films are investigated by X-ray diffraction (XRD) , reflecting electron diffraction (RED), scanning electron microscopy (SEM) and ultraviolet visible absorption spectrometry (UV). The experiment shows that the technique produces superior quality films of polycrystal ZnO and possesses higher deposition rate, lower temperature of growth and far better transparent photoconductive property than those grown by the conventional CVD or MOCVD technique.



© EDP Sciences 1993