Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-233 - C3-240
DOI http://dx.doi.org/10.1051/jp4:1993331
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-233-C3-240

DOI: 10.1051/jp4:1993331

A study of remote plasma enhanced CVD of silicon nitride films

S.E. ALEXANDROV1, M.L. HITCHMAN2 and S. SHAMLIAN2

1  Department of Electronic Material Technology, St. Petersburg State Technical University, Polytechnic Street 29, St. Petersburg 195 251, Russia
2  Department of Pure and Applied Chemistry, University of Strathclyde, 295 Cathedral Street, Glasgow G1 1XL, United Kingdon


Abstract
The growth of silicon nitride (SiNxHy) films from SiH4 and N2 by capacitively coupled remote PECVD is described for the first time. The influence of process parameters on the growth rate, concentration of bonded hydrogen, and properties of deposited films is discussed. The most probable mechanism of film formation is proposed on the basis of the experimental results obtained.



© EDP Sciences 1993