Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-225 - C3-232
DOI http://dx.doi.org/10.1051/jp4:1993330
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-225-C3-232

DOI: 10.1051/jp4:1993330

Laser-assisted chemical vapour deposition of TiSi2: aspects of deposition and etching

H. WESTBERG, M. BOMAN and J.-O. CARLSSON

Thin Film and Surface Chemistry Group, Institute of Chemistry, Uppsala University, Box 531, 751 21 Uppsala, Sweden


Abstract
Lines of TiSi2 were written on Si(100) substrates by using a focused Ar+-laser. The reaction gas mixture consisted of TiCl4 and H2 and the substrate was used as the silicon source. The laser deposited TiSi2 lines were examined as a function of the deposition parameters. Especially the initial reactions have been studied by varying the the writing speed in a wide range. The C-54 phase of TiSi2 was observed in all experiments. The geometrical shape and the surface profile of the deposited TiSi2 were complicated functions of the process parameters and the growth process itself. Substrate reactions increased the substrate etching initially. After a sufficiently thick layer of TiSi2 had been grown, thus protecting the substrate from the reaction gas mixture, the etch process stopped. By minimizing the initial substrate reactions, flat lines with respect to the substrate surface could be grown.



© EDP Sciences 1993