Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-207 - C3-207
DOI http://dx.doi.org/10.1051/jp4:1993327
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-207-C3-207

DOI: 10.1051/jp4:1993327

Thermal and laser-activated CVD : a comparison

J.-O. CARLSSON

Uppsala University, Department of Chemistry, Box 531, 751 21 Uppsala, Sweden


Abstract
In many CVD processes there is a complex interplay between the homogeneous reactions in the vapour and the heterogeneous growth reactions. The homogeneous reactions in the vapour can be enhanced by using hot-wall reactors or photolytic laser-assited CVD with the laser beam in parallel to the substrate surface. In contrast to the use of photolysis, use of a hot wall reactor does not permit discrination between different homogeneous reactions in the vapour. This means that new reaction channels can be opened by photolysis and CVD materials different from those grown in a hotwall reactor can be produced. Thermal laser-assisted CVD (TLCVD) differs considerably from large-area CVD. The extreme suppression of the homogeneous reactions in the vapour in TLCVD means that other precursors than those used in the large-area CVD are preferred. Similarities and differences between conventional CVD and various laser-assisted CVD processes will be discussed in connection to deposition of tungsten, aluminium, carbon, and titanium carbide.



© EDP Sciences 1993