Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-183 - C3-188
DOI http://dx.doi.org/10.1051/jp4:1993323
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-183-C3-188

DOI: 10.1051/jp4:1993323

EPMA and ellipsometric characterization of PECVD boron-carbon films

A.I. KANAEV, S. Yu. RYBAKOV and M.N. CHURAEVA

Institute of Physical Chemistry, Academy of Sciences, Leninsky pr. 31, 117915 Moscow, Russia


Abstract
The characteristics of a-B/C : H films, produced by PECVD on Si (100) surface using the novel harmless precursorcarborane have been studied. These films proved to be excellent for protection tokamaks inner surfaces, for they are heat-proof and chemically resistant. EPMA and ellipsometry used together enabled to determine not only the films composition and thickness, but also the density and some other parameters. A special computer program based on Yakovitz-Newbury method has been developed to study rather thin ([MATH]100nm) films by EPMA. Spectroellipsometry was used to determine the wave dependence of the films optical constants. It has been established that B/C ratio grows from 1 to 3.6 with increasing in carborane pressure and does not depend on a substrate temperature and voltage applied. EPMA measurements performed in cooperation with ellipsometry showed the increasing microporosity (up to 40%) for the film exposed to the fluence of deuterium ions about 1021cm-2.



© EDP Sciences 1993