Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-139 - C3-145
DOI http://dx.doi.org/10.1051/jp4:1993317
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-139-C3-145

DOI: 10.1051/jp4:1993317

Growth studies and physical characterizations of Pb-Se-Te epilayers grown by H.W.E.

A. OBADI1, S. CHARAR1, C. FAU1, O. DOS SANTOS1, M. AVEROUS1, S. DAL CORSO2, B. LIAUTARD2 and J.C. TEDENAC2

1  Groupe d'Etude des Semiconducteurs, URA 357, Université Montpellier II, Place E. Bataillon, CC74, 34095 Montpellier cedex 05, France
2  Laboratoire de Physicochimie des Matériaux, URA 407, Université Montpellier II, Place E. Bataillon, CC03, 34095 Montpellier cedex 05, France


Abstract
The deposition process of IV- VI semiconductors is studied in order to determine optimal conditions of evaporation. A thermodynamical model of the growth is proposed and its use explained in HWE applications. Using these results, epitaxial thin films have been achieved on BaF2 and Si substrates in all the composition range from PbSe to PbTe. The epilayers obtained were then characterized by Xray diffraction, Auger spectroscopy, SEM observations and electrical measurements. An optical study from 4.2 to 300K is finally presented and the energy band gap dependence versus composition and temperature has been established.



© EDP Sciences 1993