Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-131 - C3-138
DOI http://dx.doi.org/10.1051/jp4:1993316
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-131-C3-138

DOI: 10.1051/jp4:1993316

Transport phenomena in a cold wall vertical reactor for metalorganic vapor phase growth of β-SiC layers

H. CHEHOUANI1, S. BENET1, B. ARMAS2, C. COMBESCURE2, A. FIGUERAS3 and S. GARELIK3

1  LPA, Université de Perpignan, 66860 Perpignan, France
2  IMP/CNRS, BP. 5, 66120 Odeillo, France
3  Institut de Ciencia de Materials de Barcelona, CSIC, Campus de la UAB, 08193 Cerdanyola, Spain


Abstract
The deposition rate and uniformity in CVD reactors are function of transport phenomena. A mathematical model including the coupled mass transfer with hydrodynamics and heat transfer has been developed to predict reactant concentrations, flow patterns and temperature fields in a cold wall CVD reactor. The model consists of the partial differential equations describing the balance of mass, momentum, heat and species concentration and variable gas properties. The equations are solved numerically in two-dimensional, axisymmetric form using a control-volume-based finite difference technique. The model is applied to growth of silicon carbide layers obtained by LPCVD from the pyrolysis of tetramethylsilane. We present computed temperature, velocity and TMS concentration profiles. We compare predicted deposition rates with experimental results



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