Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-123 - C3-130
DOI http://dx.doi.org/10.1051/jp4:1993315
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-123-C3-130

DOI: 10.1051/jp4:1993315

Elaboration of in situ phosphorus doped polysilicon films under LPCVD conditions : process modelling and characterization

A. TOUNSI1, E. SCHEID2, C. AZZARO1, P. DUVERNEUIL1 and J.P. COUDERC1

1  Laboratoire de Génie Chimique, URA 192 du CNRS, ENSIGC/INPT, 18 chemin de la Loge, 31078 Toulouse cedex, France
2  LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse cedex, France


Abstract
In this paper, results of a complete study dealing with the deposition of in situ phosphorus doped polysilicon and combining experimental approach, deposition modelling and film characterization are presented. Their interpretation has helped to put forward the importance of the entrance zone length as deposition parameter, which was most often totally neglegted.



© EDP Sciences 1993