Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-99 - C3-105
DOI http://dx.doi.org/10.1051/jp4:1993312
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-99-C3-105

DOI: 10.1051/jp4:1993312

Mass spectrometry study of the gas phase reactions in the CVD of Si and in situ-phosphorus doped Si in order to explain the different growth rates

J. SIMON, R. FEURER, A. REYNES and R. MORANCHO

Laboratoire des Matériaux, URA 445 du CNRS, Institut National Polytechnique de Toulouse, ENSCT, 118 route de Narbonne, 31077 Toulouse cedex, France


Abstract
The experiments have been carried out in a vertical impinging jet type reactor in order to have a kinetically controlled growth. Two types of heating modes were used : hot wall reactor (HWR) and cold wall reactor (CWR). The gas phase compositions have been determined by coupling the reactor to a quadrupole mass spectrometer (QMS), while the growth rates were measured versus temperature and phosphine to disilane molar ratio in order to determine the species responsible for the deposits. Disilane draws a decrease in the inhibition of the growth rate which is 4 times less than in the case of monosilane as starting product. In contrast, phosphorus incorporation, which is in the range 1,5.1019-8.1020 atom cm-3, keeps the same order of magnitude.



© EDP Sciences 1993